Paoloni, C (2000) A simplified procedure to calculate the power gain definitions of FET's. IEEE Transactions on Microwave Theory and Techniques, 48 (3). pp. 470-474. ISSN 0018-9480
Full text not available from this repository.Abstract
A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.