HEMT-HBT matrix amplifier

Paoloni, C (2000) HEMT-HBT matrix amplifier. IEEE Transactions on Microwave Theory and Techniques, 48 (8). pp. 1308-1312. ISSN 0018-9480

Full text not available from this repository.

Abstract

A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower de power consumption without remarkable gain and bandwidth Seduction, maintaining the advantage of using HEMT's in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.

Item Type:
Journal Article
Journal or Publication Title:
IEEE Transactions on Microwave Theory and Techniques
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/ta
Subjects:
ID Code:
56555
Deposited By:
Deposited On:
08 Aug 2012 18:12
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 08:02