Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918

Smirnov, V. M. and Batty, P. J. and Krier, A. and Jones, Robert (2007) Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918. In: Quantum Sensing and Nanophotonic Devices IV. SPIE-INT SOC OPTICAL ENGINEERING, San Jose, p. 47918. ISBN 978-0-8194-6592-4

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Abstract

GaInAsPSb is a new narrow gap semiconductor material, which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Unique physical properties of the alloy are discussed and its advantages for mid-infrared optoelectronic devices are considered. Liquid phase epitaxy (LPE) growth conditions for GaInAsPSb homogeneous high crystal quality layers lattice-matched onto GaSb substrates were determined. Spectra of photoluminescence (PL) emission were investigated. Homejunction p-i-n light-emitting diodes (LEDs) based on this pentenary alloy were fabricated and electroluminescence (EL) peaking near 4.0 mu m at room temperature was observed.

Item Type:
Contribution in Book/Report/Proceedings
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
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ID Code:
56521
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Deposited On:
07 Aug 2012 10:26
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Jul 2020 11:02