InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Vanov, S. V. and Krier, A. (2009) InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. Microelectronics Journal, 40 (3). pp. 469-472. ISSN 0026-2692

Full text not available from this repository.

Official URL: https://doi.org/10.1016/j.mejo.2008.06.058

Abstract

We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.

Item Type:

Journal Article

Journal or Publication Title:

Microelectronics Journal

Uncontrolled Keywords:

/dk/atira/pure/researchoutput/libraryofcongress/qc

Subjects:

?? MID-INFRAREDINSB QUANTUM DOTS LIGHT EMITTING DIODES MOLECULAR BEAM EPITAXYPHYSICSENGINEERING(ALL)QC PHYSICS ??

Departments:

Faculty of Science and Technology > Physics

ID Code:

56515

Deposited By:

ep_importer_pure

Deposited On:

07 Aug 2012 09:36

Refereed?:

Yes

Published?:

Published

Last Modified:

15 Sep 2023 00:03

URI:

https://eprints-dev.lancs.ac.uk/id/eprint/56515