Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

Young, Robert J. and Mereni, Lorenzo O. and Petkov, Nikolay and Knight, Gabrielle R. and Dimastrodonato, Valeria and Hurley, Paul K. and Hughes, Greg and Pelucchi, Emanuele (2010) Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. Journal of Crystal Growth, 312 (9). pp. 1546-1550. ISSN 0022-0248

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Abstract

We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0 degrees, 0.2 degrees, 0.4 degrees and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of similar to 4.25 meV found from a 15 nm quantum well. The width of the emission from the 15 nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K) electron mobilities up to mu similar to 3.5 x 10(4) cm(2)/V s with an electron concentration of similar to 1 x 10(16).

Item Type:
Journal Article
Journal or Publication Title:
Journal of Crystal Growth
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
54907
Deposited By:
Deposited On:
06 Jun 2012 13:05
Refereed?:
Yes
Published?:
Published
Last Modified:
19 Feb 2020 08:08