Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates

Healy, S. B. and Young, R. J. and Mereni, L. O. and Dimastrodonato, V. and Pelucchi, E. and O'Reilly, E. P. (2010) Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates. Physica E: Low-dimensional Systems and Nanostructures, 42 (10). pp. 2761-2764. ISSN 1386-9477

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Abstract

Recent work has shown that site-controlled dots (QD) grown on (1 1 1)B GaAs substrates, pre-patterned with tetrahedral pyramidal recesses (Baier et al., 2006) [1], (Pelucchi et al., 2007) [2], (Zhu et al., 2007) [3] are suitable for the generation of single and entangled photons (Young et al., 2009) [4]. We recently introduced InGaAs/GaAs site controlled QD structures which demonstrated record breaking spectral purity, and we showed that increasing the indium concentration of the active region allows easy tunability of the emission wavelength (Mereni et al., 2009) [5,6]. We present here the first theoretical analysis of the emission energies and optical properties of this system as a function of QD height and In concentration. We model the dots using an 8 band k.p theory chosen to provide the best convergence and performance for structures oriented specifically along the (1 1 1) crystallographic direction. (C) 2009 Elsevier B.V. All rights reserved.

Item Type:
Journal Article
Journal or Publication Title:
Physica E: Low-dimensional Systems and Nanostructures
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
54905
Deposited By:
Deposited On:
06 Jun 2012 12:55
Refereed?:
Yes
Published?:
Published
Last Modified:
10 Nov 2020 13:00