Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

Dimastrodonato, V. and Mereni, L. O. and Young, R. J. and Pelucchi, E. (2011) Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots. Journal of Crystal Growth, 315 (1). pp. 119-122. ISSN 0022-0248

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Abstract

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (similar to 27 mu eV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems. (C) 2010 Elsevier B.V. All rights reserved.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Crystal Growth
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
54904
Deposited By:
Deposited On:
06 Jun 2012 12:47
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 07:54