AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

Dimastrodonato, V. and Mereni, L. O. and Young, R. J. and Pelucchi, E. (2010) AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment. Journal of Crystal Growth, 312 (21). pp. 3057-3062. ISSN 0022-0248

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Abstract

We present in this work a simple quantum well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a metalorganic vapour phase epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low-temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (1 0 0). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable with those that can be obtained by molecular beam epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1 ppb level are needed to achieve high quality quantum well growth. (C) 2010 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Journal or Publication Title: Journal of Crystal Growth
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 54901
Deposited By: ep_importer_pure
Deposited On: 06 Jun 2012 12:21
Refereed?: Yes
Published?: Published
Last Modified: 19 Feb 2020 08:08
URI: https://eprints.lancs.ac.uk/id/eprint/54901

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