AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

Dimastrodonato, V. and Mereni, L. O. and Young, R. J. and Pelucchi, E. (2010) AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment. Journal of Crystal Growth, 312 (21). pp. 3057-3062. ISSN 0022-0248

Full text not available from this repository.

Abstract

We present in this work a simple quantum well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a metalorganic vapour phase epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low-temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (1 0 0). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable with those that can be obtained by molecular beam epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1 ppb level are needed to achieve high quality quantum well growth. (C) 2010 Elsevier B.V. All rights reserved.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Crystal Growth
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
54901
Deposited By:
Deposited On:
06 Jun 2012 12:21
Refereed?:
Yes
Published?:
Published
Last Modified:
22 Jul 2020 11:00