Tan, C. H. and Goh, Y. L. and Marshall, A. R. J. and Tan, L. J. J. and Ng, J. S. and David, J. P. R.
(2007)
*Extremely low excess noise InAlAs avalanche photodiodes.*
In:
2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings :.
IEEE, Matsue, pp. 81-83.
ISBN 978-1-4244-0874-0

## Abstract

Excess noise factors < 4 at avalanche gain of 10 measured on a series of p(+)in(+) InAlAs diodes with avalanche regions ranging from 0.11 mu m to 2.53 mu m. Extremely low excess noise, corresponding to effective ionization coefficient ratios, k, of 0.15 < k < 0.25, showed the potential of InAlAs as multiplication region for avalanche photodiodes. Breakdown voltage obtained from multiplication characteristics of these diodes showed a linear dependence of breakdown voltage on the avalanche width. Using tunnelling parameters derived from current-voltage' measurements with the ionization coefficients and threshold energies derived from gain and excess noise measurements, our calculations showed that InAlAs avalanche photodiodes have sensitivities of similar to 28.8dBm assuming a rather high pre-amplifier noise of 15pAHz(-1/2).