Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

Marshall, A. R. J. and Tan, C. H. and Steer, M. J. and David, J. P. R. (2008) Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. Applied Physics Letters, 93 (11). -. ISSN 0003-6951

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Abstract

An experimental investigation into impact ionization in InAs photodiodes is presented. Photomultiplication measurements on p-i-n and n-i-p diodes show that while high avalanche gains can be obtained for electron initiated multiplication, there is virtually no gain with hole initiated multiplication. This indicates that the electron ionization coefficient is significantly greater than the hole ionization coefficient raising the possibility of extremely low noise InAs avalanche photodiodes when gain is initiated by electrons. The onset of electron initiated impact ionization was detectable at electric fields below 10 kV cm(-1) with useful gain observed at biases below 10 V. (C) 2008 American Institute of Physics.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 54604
Deposited By: ep_importer_pure
Deposited On: 28 May 2012 11:13
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 07:54
URI: https://eprints.lancs.ac.uk/id/eprint/54604

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