High gain InAs electron-avalanche photodiodes for optical communication

Marshall, A. R. J. and Vines, P. and Xie, S. and David, J. P. R. and Tan, C. H. (2010) High gain InAs electron-avalanche photodiodes for optical communication. In: 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). IEEE, Kagawa, -. ISBN 978-1-4244-5920-9

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We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming the electron only multiplication process within the field range covered. Excess noise measurements showed the excess noise factors of less than 2, providing further evidence of the ideal avalanche properties in InAs. Monte Carlo simulations performed provided good agreement to experimental results.

Item Type: Contribution in Book/Report/Proceedings
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Departments: Faculty of Science and Technology > Physics
ID Code: 54603
Deposited By: ep_importer_pure
Deposited On: 28 May 2012 10:32
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 05:31
URI: https://eprints.lancs.ac.uk/id/eprint/54603

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