Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

Marshall, Andrew R. J. and Tan, Chee Hing and Steer, Mathew J. and David, John P. R. (2009) Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. IEEE Photonics Technology Letters, 21 (13). pp. 866-868. ISSN 1041-1135

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Abstract

Measurements of the avalanche multiplication noise in InAs p-i-n and n-i-p diodes at room temperature demonstrate unambiguously that the avalanche multiplication process is dominated by impact ionization of electrons. This results in the excess noise factor for electron initiated multiplication asymptotically approaching a maximum value just less than two and becoming virtually gain-independent for higher gains. Measurements for predominantly hole initiated multiplication show corresponding high excess noise factors suggesting the electron to hole ionization coefficient ratios are comparable to those reported for Hg1-xCdxTe electron avalanche photodiodes.

Item Type:
Journal Article
Journal or Publication Title:
IEEE Photonics Technology Letters
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
54602
Deposited By:
Deposited On:
28 May 2012 11:09
Refereed?:
Yes
Published?:
Published
Last Modified:
10 Nov 2020 13:00