Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

Marshall, Andrew Robert Julian and Vines, Peter and Ker, Pin Jern and David, John P. R. and Tan, Chee Hing (2011) Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. IEEE Journal of Quantum Electronics, 47 (6). pp. 858-864. ISSN 0018-9197

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Abstract

The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.

Item Type:
Journal Article
Journal or Publication Title:
IEEE Journal of Quantum Electronics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
54600
Deposited By:
Deposited On:
28 May 2012 10:28
Refereed?:
Yes
Published?:
Published
Last Modified:
20 Oct 2020 01:59