Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

Hayne, Manus and USHER, A and HARRIS, J J and FOXON, C T (1992) Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions. Physical review B, 46 (15). pp. 9515-9519. ISSN 0163-1829

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Abstract

Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Additional Information:
© 1992 The American Physical Society
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
54551
Deposited By:
Deposited On:
25 May 2012 13:15
Refereed?:
Yes
Published?:
Published
Last Modified:
12 Jul 2020 03:48