Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

Carrington, Peter James and Mahajumi, Abu Syed and Wagener, Magnus C. and Botha, Johannes Reinhardt and Zhuang, Qiandong and Krier, Anthony (2012) Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells. Physica B: Condensed Matter, 407 (10). pp. 1493-1496. ISSN 0921-4526

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Abstract

We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented. (C) 2011 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Journal or Publication Title: Physica B: Condensed Matter
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 51603
Deposited By: ep_importer_pure
Deposited On: 25 Nov 2011 10:14
Refereed?: Yes
Published?: Published
Last Modified: 11 Feb 2020 07:56
URI: https://eprints.lancs.ac.uk/id/eprint/51603

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