Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Zhuang, Qiandong and Li, J. M. and Li, H. X. and Zeng, Y. P. and Pan, L. and Chen, Y. H. and Kong, M.Y. and Lin, L. Y. (1998) Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice. Applied Physics Letters, 73 (25). pp. 3706-3708. ISSN 1077-3118

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Abstract

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
51596
Deposited By:
Deposited On:
23 Nov 2011 14:38
Refereed?:
Yes
Published?:
Published
Last Modified:
11 Mar 2020 03:21