Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Zhuang, Qiandong and Li, J. M. and Li, H. X. and Zeng, Y. P. and Pan, L. and Chen, Y. H. and Kong, M.Y. and Lin, L. Y. (1998) Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice. Applied Physics Letters, 73 (25). pp. 3706-3708. ISSN 1077-3118

Abstract

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice