Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

Zhuang, Qiandong and Li, J. M. and Zeng, Y. P. and Pan, L. and Li, H. X. and Kong, M.Y. and Lin, L. Y. (1999) Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures. Journal of Crystal Growth, 200 (3-4). pp. 375-381. ISSN 0022-0248

Full text not available from this repository.

Abstract

InGaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8–12 μm infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). High-quality QDs superlattice can be achieved by higher growth temperature. Cross-sectional TEM shows the QDs in the successive layers are vertically aligned along growth direction. Interaction of partial vertically aligned columns leads to a perfect vertical ordering. With increasing number of bilayers, the average QDs size becomes larger in height and rapidly saturates at a certain value, while average lateral length nearly preserves initial size. This change leads to the formation of QDs homogeneous in size and of a particular shape. The observed self-organizations are attributed to the effect of strain distribution at QDs on the kinetic growth process. DCXRD measurement shows two sets of satellite peaks which corresponds to QDs superlattice and multi quantum wells formed by the wetting layers. Kinematical simulations of the wetting layers indicate that the formation of QDs is associated with a decrease of the effective indium content in the wetting layers.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Crystal Growth
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
51517
Deposited By:
Deposited On:
18 Nov 2011 15:33
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Apr 2020 02:01