Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

Zhuang, Qiandong and Li, J. M. and Zeng, Y. P. and Pan, L. and Chen, Y. H. and Kong, M.Y. and Lin, L. Y. (1999) Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers. Journal of Electronic Materials, 28 (5). pp. 503-505. ISSN 0361-5235

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Abstract

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6–10.7 µm. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Electronic Materials
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
51515
Deposited By:
Deposited On:
18 Nov 2011 15:13
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 07:43