Influence of indium composition on the surface morphology of self-organized InxGa1−xAs quantum dots on GaAs substrates

Li, H. X. and Zhuang, Qiandong and Wang, Z. G. and Daniels-Race, T. (2000) Influence of indium composition on the surface morphology of self-organized InxGa1−xAs quantum dots on GaAs substrates. Journal of Applied Physics, 87 (1). pp. 188-191. ISSN 0021-8979

Full text not available from this repository.

Abstract

InxGa1−xAs self-organized quantum dots with x=1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. The areal density, distribution, and shapes have been found to be dependent on x. The dot shape changes from a round shape for x=1.0 to an elliptical shape for x⩽0.5. The major axis and minor axis of the elliptical InxGa1−xAs dots are along the [math10] and [110] directions, respectively. The ordering phenomenon is also discussed. It is suggested that the dot–dot interaction may play important roles in the self-organization process. © 2000 American Institute of Physics.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
51502
Deposited By:
Deposited On:
18 Nov 2011 12:11
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 07:43