Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions

Hayne, M and Usher, Alan and Harris, Jeffrey J and Moshchalkov, Victor V and Foxon, C Thomas (1998) Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions. Physical review B, 57 (23). pp. 14813-14817. ISSN 1550-235X

[img]
Preview
PDF
Hayne_PRB_57_148113_1998_.pdf - Published Version

Download (90kB)

Abstract

We have investigated the time-dependent mobility and density of a modulation-doped GaAs/AlxGa1-xAs heterojunction subsequent to the lionization of DX centers using the persistent photoconductivity effect. Our results are in excellent agreement with a simple theory of mobility Limited by independent charged scattering centers. We show that these scattering centers are fluctuations in the average impurity potential which principally arise due to the presence of both positively and negatively charged impurities, and that the effect of correlation among charged impurities can be treated in terms of the removal of individual potential fluctuations.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Additional Information:
© 1998 The American Physical Society
Subjects:
ID Code:
50978
Deposited By:
Deposited On:
11 Nov 2011 09:40
Refereed?:
Yes
Published?:
Published
Last Modified:
28 Mar 2020 02:55