Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots

Maes, Jochen and Henini, Mohamed and Hayne, M and Patane, Amalia and Pulizzi, Fabio and Eaves, Laurence and Main, Peter C and Moshchalkov, Victor V (2003) Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots. Journal of Crystal Growth, 251 (1-4). pp. 186-191. ISSN 0022-0248

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Abstract

We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields (< 50 T). On increasing the amount of InAs deposited on (1 0 0)-oriented GaAs to 1.6 monolayer (ML), an abrupt change from one-dimensional to three-dimensional charge confinement is observed. For substrates cleaved along the (3 1 1)B plane, the charge confinement is found to be much weaker and gradually increases with the amount of InAs. At the highest coverage studied (1.9 ML), the quantum-dot confinement is equally effective for both substrate orientations.

Item Type: Journal Article
Journal or Publication Title: Journal of Crystal Growth
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 49812
Deposited By: ep_importer_pure
Deposited On: 19 Sep 2011 13:41
Refereed?: Yes
Published?: Published
Last Modified: 10 Jun 2019 20:21
URI: https://eprints.lancs.ac.uk/id/eprint/49812

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