InAs/InP quantum dots:from single to coupled dots applications

Cornet, Charles and Schliwa, Andrei and Hayne, M. and Chauvin, N. and Dore, Francois and Even, Jacky and Moshchalkov, Victor V. and Bimberg, Dieter and Bremond, G. and Bru-Chevallier, C. and Gendry, M. and Loualiche, Slimane (2006) InAs/InP quantum dots:from single to coupled dots applications. Physica Status Solidi C, 3 (11). pp. 4039-4042. ISSN 1610-1634

Full text not available from this repository.

Abstract

We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k-p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. A configuration interaction model is used to determine few-particle states of these dots and a comparison with micro-photoluminescence experiments on single InAs/InP QDs is made. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type:
Journal Article
Journal or Publication Title:
Physica Status Solidi C
Subjects:
ID Code:
49492
Deposited By:
Deposited On:
12 Aug 2011 09:01
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 07:36