Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots

Hayne, M and Maes, J and Bersier, S and Schliwa, A and Muller-Kirsch, L and Kapteyn, C and Heitz, R and Bimberg, D and Moshchalkov, V V (2004) Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots. Physica E: Low-dimensional Systems and Nanostructures, 21 (2-4). pp. 189-192. ISSN 1386-9477

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Abstract

We explore the Coulomb binding of electrons to holes confined to type-II GaSb self-assembled quantum dots. We demonstrate that at low laser power electrons are more weakly bound to holes trapped by the dots than to holes in the wetting layer. On the other hand, at high laser power the hydrogenic binding energy of dot excitons increases by more than a factor of two, and so exceeds that of wetting layer excitons. We attribute this to the strong binding of 'core' electrons to dots that are highly charged with holes by optical pumping. (C) 2003 Elsevier B.V. All rights reserved.

Item Type:
Journal Article
Journal or Publication Title:
Physica E: Low-dimensional Systems and Nanostructures
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
49490
Deposited By:
Deposited On:
12 Aug 2011 08:07
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 07:36