Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots

Maes, J and Hayne, M and Henini, M and Pulizzi, F and Patane, A and Eaves, L and Moshchalkov, V V (2004) Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots. Physica B: Condensed Matter, 346-34. pp. 428-431. ISSN 0921-4526

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Abstract

We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in pulsed magnetic fields. When the interlayer distance is reduced from 9.8 to 5.5 nm, a doubling of the diamagnetic shift for a magnetic field perpendicular to the [0 0 1] direction reveals the onset of electron coupling between the dots in the stack. On reducing the interlayer distance to 3.1 nm, a lower exciton effective mass is seen in addition to the coupling. For such a close stacking, the strain field in and around the dot is completely different from that of a single-layered structure. In particular, the strain inside the InAs dots in the stack is partially relaxed, causing the observed effect. (C) 2004 Elsevier B.V. All rights reserved.

Item Type:
Journal Article
Journal or Publication Title:
Physica B: Condensed Matter
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
49486
Deposited By:
Deposited On:
12 Aug 2011 08:28
Refereed?:
Yes
Published?:
Published
Last Modified:
11 Mar 2020 03:15