Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots

Godefroo, S and Maes, J and Hayne, M and Moshchalkov, V V and Henini, M and Pulizzi, Fabio and Patane, A and Eaves, L (2004) Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots. Journal of Applied Physics, 96 (5). pp. 2535-2539. ISSN 1089-7550

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Abstract

We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12 T) magnetic fields to investigate the influence of substrate orientation and growth interruption (GI) on the electronic properties of InAs/GaAs quantum dots, grown by molecular beam epitaxy at 480 degreesC. Dot formation is very efficient on the (100) substrate: electronic confinement is already strong without GI and no significant change in confinement is observed with GI. On the contrary, for the (311)B substrate strong confinement of the charges only occurs after a GI is introduced. When longer GIs are applied the dots become higher. (C) 2004 American Institute of Physics.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100
Subjects:
ID Code:
49484
Deposited By:
Deposited On:
12 Aug 2011 08:44
Refereed?:
Yes
Published?:
Published
Last Modified:
12 Jul 2020 03:35