Electron wave-function spillover in self-assembled InAs/InP quantum wires

Maes, J and Hayne, M and Sidor, Y and Partoens, B and Peeters, F M and Gonzalez, Y and Gonzalez, L and Fuster, D and Garcia, Jorge M. and Moshchalkov, V V (2004) Electron wave-function spillover in self-assembled InAs/InP quantum wires. Physical review B, 70 (15). ISSN 1550-235X

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Abstract

Charge confinement in InAs/InP self-assembled quantum wires is studied experimentally using photoluminescence in pulsed magnetic fields and theoretically using adiabatic theory within the effective-mass approximation, taking into account the strain in the samples. We show both experimentally and theoretically that, in spite of the large conduction band offset, the electron wave function is significantly spilled out of the wire in the wire height direction for thin wires. Furthermore, for a wire thickness of up to 8 monolayers, the electron spillover is inversely related to the wire height. These effects are due to the large zero point energy of the electron. As the wire becomes thicker, the decrease in confinement energy is reflected in a reduction of the electron wave-function extent.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Subjects:
ID Code:
49483
Deposited By:
Deposited On:
12 Aug 2011 08:55
Refereed?:
Yes
Published?:
Published
Last Modified:
12 Jul 2020 03:35