Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells

Schildermans, Nele and Hayne, M and Moshchalkov, Victor V. and Rastelli, Armando and Schmidt, Oliver G. (2005) Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells. Physical review B, 72 (11): 115312. ISSN 1550-235X

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Abstract

We have investigated the optical properties of unstrained GaAs/AlxGa1-xAs quantum dot/well systems with the aim of studying the influence of confinement on the effective exciton mass, as determined from the photoluminescence line shift in high magnetic fields (<= 50 T). The effective exciton mass is found to be more than twice the value for bulk GaAs. We attribute this to an enhanced nonparabolicity in the GaAs conduction band at the nanoscale.

Item Type:

Journal Article

Journal or Publication Title:

Physical review B

Subjects:

?? inplane effective-masselectronic-structuremagnetic-fieldsenhancementholeexcitonswires ??

Departments:

Faculty of Science and Technology > Physics

ID Code:

49482

Deposited By:

ep_importer_pure

Deposited On:

12 Aug 2011 08:56

Refereed?:

Yes

Published?:

Published

Last Modified:

14 Nov 2024 01:06

URI:

https://eprints.lancs.ac.uk/id/eprint/49482