InAs/InP quantum dots (QD):From fundamental understanding to coupled QD 1.55 mu m laser applications

Cornet, Charles and Hayne, Manus and Schliwa, Andrei and Dore, Francois and Even, Jacky and Bimberg, Dieter and Moshchalkov, Victor V. and Loualiche, Slimane (2007) InAs/InP quantum dots (QD):From fundamental understanding to coupled QD 1.55 mu m laser applications. Physica Status Solidi C, 4 (2). pp. 458-461. ISSN 1610-1634

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Abstract

We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k center dot p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. The quaternary alloy InGaAsP capping is studied by magneto-photoluminescence. It is found to induce a better electronic confinement than InP. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type:
Journal Article
Journal or Publication Title:
Physica Status Solidi C
Subjects:
ID Code:
49467
Deposited By:
Deposited On:
09 Aug 2011 08:06
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 07:36