Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields.

Nuytten, Thomas and Hayne, Manus and Henini, Mohamed and Moshchalkov, Victor V. (2008) Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields. Physical review B, 77. p. 115348. ISSN 1550-235X

[img]
Preview
PDF
Nuytten_PRB_77_115348_2008_.pdf - Published Version

Download (138kB)

Abstract

We have studied the magnetic field (< 50 T) dependence of the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots as a function of temperature (T). As the temperature is raised from 4.2 up to 80 K thermal redistribution causes the PL to be increasingly dominated by dots with a lower PL energy. Magneto-PL demonstrates that these low energy dots are larger in size only in the growth direction, and not in the plane of the sample. At high temperatures (T > 100 K) a different physical phenomenon emerges: we see an anomalous decrease of the PL shift in magnetic field, which is attributed to field-enhancement of the quantum dot barrier potential. This mechanism strongly favors excitons in small dots with a weak PL shift in magnetic field, hence laterally smaller dots increasingly dominate the PL at high temperatures and high fields.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Additional Information:
© 2008 American Physical Society
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
4656
Deposited By:
Deposited On:
28 Mar 2008 16:36
Refereed?:
Yes
Published?:
Published
Last Modified:
27 Oct 2020 02:51