Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields.

Nuytten, Thomas and Hayne, Manus and Henini, Mohamed and Moshchalkov, Victor V. (2008) Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields. Physical review B, 77. p. 115348. ISSN 1550-235X

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Abstract

We have studied the magnetic field (< 50 T) dependence of the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots as a function of temperature (T). As the temperature is raised from 4.2 up to 80 K thermal redistribution causes the PL to be increasingly dominated by dots with a lower PL energy. Magneto-PL demonstrates that these low energy dots are larger in size only in the growth direction, and not in the plane of the sample. At high temperatures (T > 100 K) a different physical phenomenon emerges: we see an anomalous decrease of the PL shift in magnetic field, which is attributed to field-enhancement of the quantum dot barrier potential. This mechanism strongly favors excitons in small dots with a weak PL shift in magnetic field, hence laterally smaller dots increasingly dominate the PL at high temperatures and high fields.

Item Type: Journal Article
Journal or Publication Title: Physical review B
Additional Information: © 2008 American Physical Society
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 4656
Deposited By: Dr Manus Hayne
Deposited On: 28 Mar 2008 16:36
Refereed?: Yes
Published?: Published
Last Modified: 22 Aug 2019 00:39
URI: https://eprints.lancs.ac.uk/id/eprint/4656

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