Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

Krier, A. and Krier, S. E. and Labadi, Z. (2000) Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. . Applied Physics A, 71 (3). pp. 249-253. ISSN 0947-8396

Abstract

InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.