Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

Krier, A. and Huang, X. L. and Hammiche, A. (2000) Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. . Applied Physics Letters, 77 (23). pp. 3791-3793. ISSN 1077-3118

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Abstract

Photoluminescence in the 2–5 µm spectral region is reported from InAs1–xSbx quantum dots grown from the liquid phase at 580 °C on an InAs (100) substrate. Atomic force microscopy shows that coalesced quantum dots and then isolated quantum dots are formed with increasing Sb composition (x = 0.2–0.3) and strain. The 4 K photoluminescence of the isolated and coalesced quantum dots was observed to peak in the midinfrared at 289 and 316 meV, (4.29 and 3.92 µm), respectively. These peaks are due to type II transitions and begin to quench at temperatures above 100 K as holes become thermally activated out of the quantum dot confinement potential. ©2000 American Institute of Physics.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 77 (23), 2000 and may be found at http://link.aip.org/link/?APPLAB/77/3791/1
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 4469
Deposited By: Dr Susan E. Krier
Deposited On: 18 Mar 2008 09:55
Refereed?: Yes
Published?: Published
Last Modified: 15 Nov 2019 01:30
URI: https://eprints.lancs.ac.uk/id/eprint/4469

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