Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

Huang, X. L. and Labadi, Z. and Hammiche, A. and Krier, A. (2002) Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. . Journal of Physics D: Applied Physics, 35 (23). pp. 3091-3095. ISSN 0022-3727

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Abstract

Self-assembled PbSe quantum-dots (QD) have been grown on GaSb(100) substrates from the liquid phase. A Pb-rich melt at 517degreesC was used with 10degreesC supercooling and with a short (10 Ins) melt-substrate contact time. Atomic force microscopy has revealed that the PbSe QDs are 4-10 nm in height and 10-40 nm in diameter, with an area density of 1.7 x 10(10) cm(-2). The growth of QDs occurs in the Volmer-Weber mode and is a result of the difference in lattice structures between the PbSe and GaSb rather than the lattice constants.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Physics D: Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
4433
Deposited By:
Deposited On:
13 Mar 2008 10:00
Refereed?:
Yes
Published?:
Published
Last Modified:
20 Oct 2020 01:22