High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

Choulis, S. A. and Andreev, A. and Merrick, M. and Adams, A. R. and Murdin, B. N. and Krier, A. and Sherstnev, V. V. (2003) High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. . Applied Physics Letters, 82 (8). pp. 1149-1151. ISSN 1077-3118

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Abstract

The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 µm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (8), 2003 and may be found at http://link.aip.org/link/?APPLAB/82/1149/1
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 4431
Deposited By: Dr Susan E. Krier
Deposited On: 13 Mar 2008 10:10
Refereed?: Yes
Published?: Published
Last Modified: 22 Aug 2019 00:39
URI: https://eprints.lancs.ac.uk/id/eprint/4431

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