Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

Krier, A. and Stone, M. and Zhuang, Q. D. and Liu, P. W. and Tsai, G. and Lin, H. H. (2006) Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. . Applied Physics Letters, 89 (9). 091110. ISSN 1077-3118

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Abstract

Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 µm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 µm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (9), 2006 and may be found at http://link.aip.org/link/?APPLAB/89/091110/1
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 4407
Deposited By: Dr Susan E. Krier
Deposited On: 12 Mar 2008 11:57
Refereed?: Yes
Published?: Published
Last Modified: 21 Aug 2019 00:43
URI: https://eprints.lancs.ac.uk/id/eprint/4407

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