Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .

Krier, A. and Smirnov, V. M. and Batty, P. J. and Yin, M. and Lai, K. T. and Rybchenko, S. and Haywood, S. K. and Vasil'ev, V. I. and Gagis, G. S. and Kuchinskii, V. I. (2007) Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. . Applied Physics Letters, 91 (8). 082102. ISSN 1077-3118

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Abstract

Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 µm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (8), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/082102/1
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
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ID Code:
4404
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Deposited On:
12 Mar 2008 11:33
Refereed?:
Yes
Published?:
Published
Last Modified:
29 May 2020 00:43