Ibanez, J. and Oliva, R. and de la Mare, M. and Schmidbauer, M. and Hernandez, S. and Pellegrino, P. and Scurr, D. J. and Cusco, R. and Artus, L. and Shafi, M. and Mari, R. H. and Henini, M. and Zhuang, Q. and Godenir, A. M. R. and Krier, A. and Spanish Ministry of Education and Science Project No. MAT2007-63 and EPRSC (UK) (Funder) (2010) Structural and optical properties of dilute InAsN grown by molecular beam epitaxy. Journal of Applied Physics, 108 (10). p. 103504. ISSN 1089-7550
Full text not available from this repository.Abstract
We perform a structural and optical characterization of InAs1-xNx epilayers grown by molecular beam epitaxy on InAs substrates (x less than or similar to 2.2%). High-resolution x-ray diffraction (HRXRD) is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing (BAC) model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C-NM=2.0 +/- 0.1 eV. (C) 2010 American Institute of Physics.