Asymmetry gap in the electronic band structure of bilayer graphene.

McCann, Edward (2006) Asymmetry gap in the electronic band structure of bilayer graphene. Physical review B, 74 (16). p. 161403. ISSN 1550-235X

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Abstract

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap U between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap U(n). We discuss the influence of a finite asymmetry gap U(0) at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.

Item Type: Journal Article
Journal or Publication Title: Physical review B
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 30812
Deposited By: Dr Edward McCann
Deposited On: 07 Dec 2009 10:53
Refereed?: Yes
Published?: Published
Last Modified: 17 Sep 2019 01:06
URI: https://eprints.lancs.ac.uk/id/eprint/30812

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