Influence of trigonal warping on interference effects in bilayer graphene

Kechedzhi, K. and Falko, Vladimir I. and McCann, E. and Altshuler, B. L. (2007) Influence of trigonal warping on interference effects in bilayer graphene. Physical review letters, 98 (17): 176806. ISSN 0031-9007

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Abstract

Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.

Item Type:
Journal Article
Journal or Publication Title:
Physical review letters
Additional Information:
© 2007 The American Physical Society
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100
Subjects:
?? fluctuationsmagnetoresistanceelectron-gaswellslow-temperaturesconductionantilocalizationinversion-layersweak-localizationfilmsphysics and astronomy(all) ??
ID Code:
30811
Deposited By:
Deposited On:
07 Dec 2009 10:30
Refereed?:
Yes
Published?:
Published
Last Modified:
18 Dec 2023 01:06