Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

Zhuang, Q. and Godenir, A. and Krier, A. and Tsai, G. and Lin, H. H. (2008) Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics. Applied Physics Letters, 93 (12). p. 121903. ISSN 1077-3118

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Abstract

We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN: Sb/InAs p-i-n light emitting diodes operating near 4.0 mu m were also realized. (C) 2008 American Institute of Physics.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Article number: 121903
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 27088
Deposited By: Dr Susan E. Krier
Deposited On: 30 Sep 2009 13:44
Refereed?: Yes
Published?: Published
Last Modified: 22 Jun 2019 02:35
URI: https://eprints.lancs.ac.uk/id/eprint/27088

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