Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

Zhuang, Q. and Godenir, A. and Krier, A. and Tsai, G. and Lin, H. H. (2008) Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics. Applied Physics Letters, 93 (12). p. 121903. ISSN 1077-3118

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We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN: Sb/InAs p-i-n light emitting diodes operating near 4.0 mu m were also realized. (C) 2008 American Institute of Physics.

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Journal Article
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Applied Physics Letters
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Article number: 121903
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30 Sep 2009 13:44
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01 Jan 2022 09:12