Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Zhuang, Q. and Godenir, A. and Krier, A. (2008) Photoluminescence in InAsN epilayers grown by molecular beam epitaxy. Journal of Physics D: Applied Physics, 41 (13). p. 132002. ISSN 0022-3727

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Abstract

We report the study of photoluminescence ( PL) spectroscopy in InAsN epilayers grown by molecular beam epitaxy. All the samples exhibit intense PL emission which persists up to room temperature. Low temperature PL spectra demonstrate double-peak emissions. The dependences of the PL spectra on temperature, laser excitation power and nitrogen composition were investigated. We identified that the short wavelength and long wavelength emissions originate from the band-band transition and the localized states-valence band transition, respectively. The direct observation of the band-band transition implies the high quality of the materials, and a band-gap energy reduction of similar to 63 meV at 4 K with 1% nitrogen incorporation was deduced.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Physics D: Applied Physics
Additional Information:
Article number: 132002
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
27087
Deposited By:
Deposited On:
30 Sep 2009 13:37
Refereed?:
Yes
Published?:
Published
Last Modified:
06 May 2020 01:26