Room temperature photoluminescence at 4.5 mu m from InAsN

Zhuang, Q. and Godenir, A. M. R. and Krier, A. and Lai, K. T. and Haywood, S. K. (2008) Room temperature photoluminescence at 4.5 mu m from InAsN. Journal of Applied Physics, 103 (6). 063520. ISSN 1089-7550

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Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 µm is obtained. ©2008 American Institute of Physics

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Journal Article
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Journal of Applied Physics
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Article number: 063520
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29 Sep 2009 10:57
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21 Nov 2022 19:29