GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

Yin, M. and Nash, G. R. and Coomber, S. D. and Buckle, L. and Carrington, P. J. and Krier, A. and Andreev, A. and Przeslak, S. J. B. and de Valicourt, G. and Smith, S. J. and Emeny, M. T. and Ashley, T. (2008) GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers. Applied Physics Letters, 93 (12). p. 121106. ISSN 1077-3118

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Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. (C) 2008 American Institute of Physics.

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Journal Article
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Applied Physics Letters
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Article number: 121106
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29 Sep 2009 10:37
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21 Sep 2023 00:47