Electron coherence length and mobility in highly mismatched III-N-V alloys.

Patane, A. and Allison, G. and Eaves, L. and Kozlova, N. V. and Zhuang, Q. D. and Krier, A. and Hopkinson, M. and Hill, G. (2008) Electron coherence length and mobility in highly mismatched III-N-V alloys. Applied Physics Letters, 93 (25). p. 252106. ISSN 1077-3118

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Abstract

We investigate the quantum coherence length, L, and mobility of conduction electrons in the dilute nitride alloy GaAs1−xNx. Analysis of the negative magnetoresistance using weak localization theory reveals a marked reduction in L with increasing N-content. Our data are compared to theoretical models of electronic transport in GaAs1−xNx and discussed in terms of the unusual type of compositional disorder exhibited by III-N-V alloys. A comparative study of the electron mobility in InAs1−xNx also indicates that disorder effects are significantly weaker in this small band gap material. ©2008 American Institute of Physics

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Article number: 252106
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 27081
Deposited By: Dr Susan E. Krier
Deposited On: 29 Sep 2009 10:32
Refereed?: Yes
Published?: Published
Last Modified: 15 Oct 2019 02:30
URI: https://eprints.lancs.ac.uk/id/eprint/27081

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