Patane, A. and Allison, G. and Eaves, L. and Kozlova, N. V. and Zhuang, Q. D. and Krier, A. and Hopkinson, M. and Hill, G. (2008) Electron coherence length and mobility in highly mismatched III-N-V alloys. Applied Physics Letters, 93 (25). p. 252106. ISSN 1077-3118
Full text not available from this repository.Abstract
We investigate the quantum coherence length, L, and mobility of conduction electrons in the dilute nitride alloy GaAs1−xNx. Analysis of the negative magnetoresistance using weak localization theory reveals a marked reduction in L with increasing N-content. Our data are compared to theoretical models of electronic transport in GaAs1−xNx and discussed in terms of the unusual type of compositional disorder exhibited by III-N-V alloys. A comparative study of the electron mobility in InAs1−xNx also indicates that disorder effects are significantly weaker in this small band gap material. ©2008 American Institute of Physics