Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

Nash, G. R. and Przeslak, S. J. B. and Smith, S. J. and de Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. Applied Physics Letters, 94 (9). 091111. ISSN 1077-3118

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Abstract

Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at similar to 3.3 mu m at 200 K for the 1.1% structure. ©2009 American Institute of Physics

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Article number: 091111
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 27079
Deposited By: Dr Susan E. Krier
Deposited On: 29 Sep 2009 10:23
Refereed?: Yes
Published?: Published
Last Modified: 02 Jul 2019 03:00
URI: https://eprints.lancs.ac.uk/id/eprint/27079

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