de la Mare, M. and Zhuang, Q. and Krier, A. and Patane, A. and Dhar, S. (2009) Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. Applied Physics Letters, 95 (3). 031110. ISSN 1077-3118
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Official URL: https://doi.org/10.1063/1.3187534
Abstract
We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.
Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Article number: 031110
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments:
ID Code:
27076
Deposited By:
Deposited On:
29 Sep 2009 09:55
Refereed?:
Yes
Published?:
Published
Last Modified:
21 Nov 2022 19:29