Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

de la Mare, M. and Zhuang, Q. and Krier, A. and Patane, A. and Dhar, S. (2009) Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. Applied Physics Letters, 95 (3). 031110. ISSN 1077-3118

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Abstract

We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%-1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Article number: 031110
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 27076
Deposited By: Dr Susan E. Krier
Deposited On: 29 Sep 2009 09:55
Refereed?: Yes
Published?: Published
Last Modified: 22 Jun 2019 02:35
URI: https://eprints.lancs.ac.uk/id/eprint/27076

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