Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

Carrington, P. J. and Zhuang, Q. and Yin, M. and Krier, A. (2009) Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes. Semiconductor Science and Technology, 24 (7). 075001. ISSN 0268-1242

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Abstract

Intense room temperature emission at 3.7 mu m is reported from light-emitting diodes (LEDs) which contain ten InAsSb/InAs type II multi quantum wells grown by molecular beam epitaxy. Interpretation of the spectra revealed the existence of two confined heavy-hole states with emission peaks of 0.33 and 0.37 eV at 4 K. Analysis of the temperature dependence of the electroluminescence shows that emission occurred predominantly from the excited heavy-hole state at high temperatures. At room temperature, the devices produced a quasi-cw power of 12 mu W at 100 mA injection current corresponding to an internal quantum efficiency of 2.2%.

Item Type:
Journal Article
Journal or Publication Title:
Semiconductor Science and Technology
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
27072
Deposited By:
Deposited On:
29 Sep 2009 08:17
Refereed?:
Yes
Published?:
Published
Last Modified:
23 Oct 2020 08:24