Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields.

Nuytten, Thomas and Hayne, Manus and Henini, Mohamed and Moshchalkov, Victor V. (2009) Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. Microelectronics Journal, 40 (3). pp. 486-488.

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Abstract

We have investigated the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs) in high magnetic fields of up to 50 T and as a function of temperature. Our data clearly indicate that two different mechanisms are at work. At low temperatures (T < 80 K), the zero-field PL is increasingly dominated by lower energy dots. High-field measurements however demonstrate that these dots are larger in size only in the growth direction. At temperatures above 100 K, a strong decrease of the PL peak energy shift with field is observed, while the zero-field PL is characterized by a redshift according to the changes in the bandgap. We discuss these contradictory observations in terms of a phenomenon that we call field-assisted enhancement of the QD barrier potential. Since this effect is much stronger for small high-energy QDs, the latter progressively dominate the PL emission when temperature and magnetic field are increased.

Item Type: Journal Article
Journal or Publication Title: Microelectronics Journal
Additional Information: The final, definitive version of this article has been published in the Microelectronics Journal, 40 (3), 2009, © ELSEVIER.
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 26967
Deposited By: Dr Manus Hayne
Deposited On: 20 Aug 2009 12:44
Refereed?: Yes
Published?: Published
Last Modified: 19 Sep 2019 23:44
URI: https://eprints.lancs.ac.uk/id/eprint/26967

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