Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields.

Nuytten, Thomas and Hayne, Manus and Henini, Mohamed and Moshchalkov, Victor V. (2009) Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. Microelectronics Journal, 40 (3). pp. 486-488.

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Abstract

We have investigated the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs) in high magnetic fields of up to 50 T and as a function of temperature. Our data clearly indicate that two different mechanisms are at work. At low temperatures (T < 80 K), the zero-field PL is increasingly dominated by lower energy dots. High-field measurements however demonstrate that these dots are larger in size only in the growth direction. At temperatures above 100 K, a strong decrease of the PL peak energy shift with field is observed, while the zero-field PL is characterized by a redshift according to the changes in the bandgap. We discuss these contradictory observations in terms of a phenomenon that we call field-assisted enhancement of the QD barrier potential. Since this effect is much stronger for small high-energy QDs, the latter progressively dominate the PL emission when temperature and magnetic field are increased.

Item Type:
Journal Article
Journal or Publication Title:
Microelectronics Journal
Additional Information:
The final, definitive version of this article has been published in the Microelectronics Journal, 40 (3), 2009, © ELSEVIER.
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
26967
Deposited By:
Deposited On:
20 Aug 2009 12:44
Refereed?:
Yes
Published?:
Published
Last Modified:
19 Sep 2020 01:17