Nucleation and growth of He-3 crystals below 1 mK.

Tsepelin, Viktor and Alles, Harry and Babkin, A. and Harme, J. P. H. and Jochemsen, Reyer and Parshin, Alexander Y. and Tvalashvili, G. (2000) Nucleation and growth of He-3 crystals below 1 mK. Physica B: Condensed Matter, 284-28 (1). pp. 351-352. ISSN 0921-4526

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Abstract

We describe our first measurements on nucleation and growth of He-3 crystals at temperatures down to 0.55 mK. Nucleation of the solid phase initiated by high voltage has been explored. The growth kinetics of the solid-liquid interface has been studied by combining a low-temperature multiple-beam interferometer and high-precision pressure measurements. The effective growth coefficient obtained in our preliminary measurements is consistent with the data of Akimoto et al. at 0.7 mK (Physica B 255 (1998) 19).

Item Type:
Journal Article
Journal or Publication Title:
Physica B: Condensed Matter
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
?? GROWTH KINETICSHE-3 LIQUID-SOLID INTERFACEHE-3 SOLIDLIQUID-SOLID INTERFACEOPTICAL INTERFEROMETRYSOLID HE-3ELECTRONIC, OPTICAL AND MAGNETIC MATERIALSELECTRICAL AND ELECTRONIC ENGINEERINGCONDENSED MATTER PHYSICSQC PHYSICS ??
ID Code:
23545
Deposited By:
Deposited On:
03 Feb 2009 13:09
Refereed?:
Yes
Published?:
Published
Last Modified:
17 Sep 2023 00:28